Semiconductor Fair |Energy Efficiency Challenges and Power Semiconductor Innovations in AI Infrastructure

The continuous evolution and upgrades of large models like DeepSeek have greatly accelerated the diffusion and deployment of AI technologies, driving the global expansion of intelligent computing centers to meet the ever-increasing demand for intelligent computing. This development trend has positively promoted the infrastructure of computing power, but at the same time, the issue of high energy consumption has become increasingly prominent, posing a bottleneck for the development of intelligent computing centers.

Currently, intelligent computing centers consume 1-2% of the global electricity. Predictions indicate that this proportion could surge to 21% by 2030. As a result, global intelligent computing data centers are increasing their investments in power distribution systems, striving to effectively reduce energy consumption while improving power density.

1. AI Infrastructure Energy Consumption Challenges

As the foundation supporting AI applications, the importance of data centers cannot be overstated. However, with the continuous growth of AI demand, data centers are facing increasingly severe energy consumption challenges.

With the increase in power density of terminal cabinets, the enhancement of GPU chip computing power in intelligent computing centers has directly driven the rise in power consumption. For example, Nvidia's H100/H200/H800 chips have a TDP design power of up to 700W, while the B200 power consumption reaches 1000W, and the GB200's power consumption is as high as 2700W. The rapid increase in computing power directly results in a sharp rise in power consumption.

The Grok 3 data center recently released by xAI is equipped with 200,000 Nvidia H100 GPUs. It is estimated that the annual electricity consumption of the Grok 3 supercomputer cluster will reach 430 million kWh, with its core training cluster consuming up to 150 MW, and the next-generation model (such as Grok 4) will require 1.2 GW of power for training.

From a system perspective, AI servers are typically composed of 8-card GPUs or NPU modules, with a power consumption of 5-10 kW per server. When these servers are further combined into entire cabinets, the cabinet power density can reach over 40 kW. For example, Nvidia's DGX 8-card GPU H100 server has a rated power consumption of 10.2 kW, and a cabinet with four servers has a power consumption of 42 kW. In the GB200 architecture, the power density of the NVL36 cabinet is 72 kW, while the NVL72 liquid-cooled cabinet can reach 120 kW.

2. The Application of Power Semiconductors

Power supply systems require lower overall system costs and compact sizes, so power density must be increased, especially as the average power density of data centers is rapidly increasing. Ten years ago, each 1U rack typically had only 5 kW, but now it has increased to 20 kW, 30 kW, or more.

Power supply units (PSUs) must also meet the specific needs of the data center industry. AI data center PSUs should meet the strict Open Rack V3 (ORV3) basic specifications, requiring peak efficiency of over 97.5% under 30% to 100% load, and lower efficiency of 94% under 10% to 30% load.

Therefore, data centers urgently need power semiconductors that can efficiently convert electrical energy to reduce costs and emissions. Additionally, higher power conversion efficiency also means less heat generation, reducing cooling costs. Advanced power semiconductor technologies play a key role in power conversion and distribution in data centers, providing the possibility to meet these requirements.

Currently, power semiconductor devices are mainly Si (silicon), SiC (silicon carbide), and GaN (gallium nitride), each with its own characteristics, showing significant differences in electron mobility, which directly affects the speed of electron movement and device switching speed, thus impacting switching losses. At the same time, switching frequency also significantly affects the size of peripheral power electronics devices. Higher switching frequencies help reduce device size and improve power density and speed.

In the server power domain, SiC and GaN technologies have shown unique advantages. SiC diodes, due to their small reverse recovery losses, have successfully replaced Si diodes in PFC applications, significantly improving efficiency. As SiC MOSFET technology continues to mature, fewer components can achieve higher power density.

In comparison, GaN also performs excellently in PFC applications. Compared to Si MOSFETs, GaN has smaller gate and output capacitances, lower conduction resistance, and reverse recovery charges, resulting in lower switching and conduction losses. In addition, GaN can achieve higher switching frequencies, allowing for smaller inductance and more compact system size, while achieving higher power density. At light load, GaN PFC efficiency is significantly higher than SiC PFC. In high-voltage DC/DC applications, GaN chips can also improve efficiency and power density.

When working at high frequencies, SiC systems experience a faster decline in efficiency than GaN systems. Therefore, if the working frequency exceeds 200 kHz or high efficiency is required at light to half load, GaN is the preferred choice. In low-voltage DC/DC conversion (48V to 12V), GaN reduces losses and improves efficiency at light load, while SiC is more advantageous in high-voltage situations.

3. Development and Application Trends

With the rapid construction of data centers, the demand for power semiconductors is continuously rising. According to IDC, the global data center market size reached $280 billion in 2023 and is expected to grow to $380 billion by 2026, with a compound annual growth rate (CAGR) of 10.4%.

The surge in power demand from data centers has driven constant technological upgrades. The popularity of AI servers has caused the power demand of a single rack to soar from 30 kW to over 100 kW, putting higher demands on the efficiency and stability of power systems. To meet this demand, power architectures are transitioning from traditional 12V DC buses to 48V to reduce transmission losses and support higher power densities, with the promotion of Open Rack v3 standards accelerating this transformation. At the same time, data center operators are pushing for power conversion efficiency targets above 97.5%, which has accelerated the upgrade of power semiconductor technologies from Si-based to wide bandgap materials such as SiC and GaN.

The trend of intelligent power semiconductors is also becoming more prominent. By integrating sensors and control chips, self-diagnosis and protection can be achieved, improving the system's stability and intelligence. For example, power semiconductor devices in data centers can integrate temperature sensors and MEMS oscillators for more precise timing and control.

Additionally, the application areas of power semiconductors in data centers are expanding. In addition to traditional power management chips, power converters, and inverters, they are now being used in edge computing and distributed energy systems, promoting the construction of energy internet and smart cities.

In terms of technological innovation, SiC MOSFETs and GaN HEMTs are widely used in power conversion modules of AI servers, significantly improving power conversion efficiency and reducing energy consumption and heat generation. As technology advances and costs decrease, the application of third-generation semiconductor materials in data centers will further expand.

At the same time, to meet the demand for efficient and stable power in data centers, the development of new power conversion topologies has become an important trend. For example, power units using LLC resonant converters and other topologies offer advantages such as high efficiency, high power density, low ripple current, and low EMI, significantly improving the energy efficiency and stability of data centers. As data centers evolve towards higher power densities, smaller sizes, and lower costs, research and application of new power conversion topologies will become deeper.

4. Domesticization Prospects

In recent years, domestic power devices have been thriving in the data center field, with market share steadily expanding and technical breakthroughs being made. Domestic companies have already designed SiC-based 50kW HVDC power systems, showing that domestic SiC modules are gradually replacing imported IGBT modules in power electronics applications.

In terms of cost, domestic power devices have competitive pricing, helping reduce construction and operating costs for data centers. For example, domestic 650V SiC MOSFET prices have reached parity or even fallen below super-junction devices, and servers using SiC devices have reduced magnetic components by 30% and cooling costs by 50% due to their high-frequency characteristics, while maintaining the overall BOM cost unchanged.

In terms of performance, domestic power devices are continuously improving. Through Zero Voltage Switching (ZVS) and Zero Current Switching (ZCS) technologies, SiC MOSFETs can improve system efficiency to 96%-98% (meeting titanium-level energy efficiency standards). Compared to super-junction solutions, SiC MOSFETs have improved efficiency by 2%-3%. In the future, SiC MOSFETs will become the mainstream choice for intelligent computing center power systems, with market share continuing to expand.

With the acceleration of data center construction, China is investing heavily in the power semiconductor industry. According to recent statistics, over 50 related companies are already operating in the ecosystem, enhancing industry competitiveness and development potential. The prospects for domestic power devices are bright.

The continuous breakthrough in power device technology, exploring its innovative applications, and upgrading the industry has become a focal point. The upcoming NEPCON China 2025, to be held in April, will bring together leading global companies and provide a platform for power device companies to showcase new products, technologies, and solutions. Attendees will explore power semiconductor technologies, advanced packaging processes, and future trends, bringing cutting-edge insights and business opportunities to the industry chain. This will help companies enhance their brand visibility and influence while promoting communication and cooperation among global industry partners, injecting new vitality into the power device market!

Join NEPCON China 2025 to experience these groundbreaking innovations firsthand. Whether you're looking to enhance precision, reduce costs, or improve efficiency, these five automotive electronics solutions will revolutionize your manufacturing process!

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